| PART |
Description |
Maker |
| 2SC4695 |
Adoption of FBET process. Small ON resistance [Ron=1W (IB=5mA)].
|
TY Semiconductor Co., Ltd
|
| 2SC3645 |
High-Voltage Switching Applications
Adoption of FBET Process High Breakdown Voltage (VCEO = 160V)
|
TY Semicondutor
TY Semiconductor Co., Ltd
|
| 2SC3649 |
Adoption of FBET, MBIT Processes High Breakdown Voltage and Large Current Capacity
|
TY Semiconductor Co., Ltd
|
| 2SC4003 |
High breakdown voltage Adoption of MBIT process Excellent hFE linearity
|
TY Semiconductor Co., Ltd
|
| 2SC5069 |
High current capacity. Adoption of MBIT process. High DC current gain.
|
TY Semiconductor Co., Ltd
|
| AUIRFR1010Z AUIRFR1010ZTRR AUIRFR1010ZTRL |
Advanced Process Technology
Low On-Resistance
|
International Rectifier
List of Unclassifed Man...
|
| JB15HLPC-B JB15LPC-B JB15HLPC-BB JB15LPC-BB JB15HL |
Low Profile Process Sealed Tactiles
|
Nihon Kaiheiki Industry Co. Ltd.
Nihon Kaiheiki Industry...
|
| AUIRFS8405 AUIRFS8405TRL AUIRFS8405TRR AUIRFSL8405 |
Advanced Process Technology New Ultra Low On-Resistance
|
International Rectifier
|
| B15HLPC-B JB15HLPC-BB JB15HLPC-BC JB15HLPC-BE JB15 |
Illuminated Low Profile Process Sealed Tactiles
|
Nihon Kaiheiki Industry Co. Ltd.
Nihon Kaiheiki Industry...
|
